Nimewo Pati :
SI2318CDS-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 40V 5.6A SOT-23
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
42 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 20V
Disipasyon Pouvwa (Max) :
1.25W (Ta), 2.1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3