IXYS - IXGT30N60C2D1

KEY Part #: K6424199

[9391PC Stock]


    Nimewo Pati:
    IXGT30N60C2D1
    Manifakti:
    IXYS
    Detaye deskripsyon:
    IGBT 600V 70A 190W TO268.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Zener - Arrays and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in IXYS IXGT30N60C2D1 electronic components. IXGT30N60C2D1 can be shipped within 24 hours after order. If you have any demands for IXGT30N60C2D1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXGT30N60C2D1 Atribi pwodwi yo

    Nimewo Pati : IXGT30N60C2D1
    Manifakti : IXYS
    Deskripsyon : IGBT 600V 70A 190W TO268
    Seri : HiPerFAST™
    Estati Pati : Obsolete
    Kalite IGBT : PT
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 70A
    Kouran - Pèseptè batman (Icm) : 150A
    Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 24A
    Pouvwa - Max : 190W
    Oblije chanje enèji : 190µJ (off)
    Kalite Antre : Standard
    Gate chaje : 70nC
    Td (on / off) @ 25 ° C : 13ns/70ns
    Kondisyon egzamen an : 400V, 24A, 5 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 25ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Pake Aparèy Founisè : TO-268