RSD175N10TL Pricing (USD) [298599PC Stock]
- 1 pcs$0.12387
- 2,500 pcs$0.11355
- Nimewo Pati:
- RSD175N10TL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 17.5A CPT3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RSD175N10TL electronic components. RSD175N10TL can be shipped within 24 hours after order. If you have any demands for RSD175N10TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RSD175N10TL Atribi pwodwi yo
Nimewo Pati :
RSD175N10TL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 100V 17.5A CPT3
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
17.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
105 mOhm @ 8.8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
950pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
20W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CPT3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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