IXTX210P10T Pricing (USD) [5303PC Stock]
- 1 pcs$9.02924
- 30 pcs$8.98431
- Nimewo Pati:
- IXTX210P10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 100V 210A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTX210P10T electronic components. IXTX210P10T can be shipped within 24 hours after order. If you have any demands for IXTX210P10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX210P10T Atribi pwodwi yo
Nimewo Pati :
IXTX210P10T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 100V 210A PLUS247
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
210A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 105A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
740nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
69500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1040W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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