Diodes Incorporated - DMN3190LDW-7

KEY Part #: K6525350

DMN3190LDW-7 Pricing (USD) [974181PC Stock]

  • 1 pcs$0.03797
  • 3,000 pcs$0.03480

Nimewo Pati:
DMN3190LDW-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 30V 1A SOT363.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3190LDW-7 electronic components. DMN3190LDW-7 can be shipped within 24 hours after order. If you have any demands for DMN3190LDW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3190LDW-7 Atribi pwodwi yo

Nimewo Pati : DMN3190LDW-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 30V 1A SOT363
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A
RD sou (Max) @ Id, Vgs : 190 mOhm @ 1.3A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 87pF @ 20V
Pouvwa - Max : 320mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SOT-363