Diodes Incorporated - DMN53D0LW-13

KEY Part #: K6393356

DMN53D0LW-13 Pricing (USD) [2258971PC Stock]

  • 1 pcs$0.01637
  • 10,000 pcs$0.01479

Nimewo Pati:
DMN53D0LW-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 50V SOT323.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN53D0LW-13 electronic components. DMN53D0LW-13 can be shipped within 24 hours after order. If you have any demands for DMN53D0LW-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN53D0LW-13 Atribi pwodwi yo

Nimewo Pati : DMN53D0LW-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 50V SOT323
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 360mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 2 Ohm @ 270mA, 10V
Vgs (th) (Max) @ Id : 1.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 1.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 45.8pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 320mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-323
Pake / Ka : SC-70, SOT-323