FDB0260N1007L Pricing (USD) [23921PC Stock]
- 1 pcs$1.73154
- 800 pcs$1.72292
- Nimewo Pati:
- FDB0260N1007L
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 200A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDB0260N1007L electronic components. FDB0260N1007L can be shipped within 24 hours after order. If you have any demands for FDB0260N1007L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB0260N1007L Atribi pwodwi yo
Nimewo Pati :
FDB0260N1007L
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 200A D2PAK
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.6 mOhm @ 27A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
118nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8545pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.8W (Ta), 250W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263)
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)
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