IXFT18N90P Pricing (USD) [10912PC Stock]
- 1 pcs$3.77636
- 210 pcs$3.74872
- Nimewo Pati:
- IXFT18N90P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 900V 18A TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Diodes - RF, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFT18N90P electronic components. IXFT18N90P can be shipped within 24 hours after order. If you have any demands for IXFT18N90P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT18N90P Atribi pwodwi yo
Nimewo Pati :
IXFT18N90P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 900V 18A TO268
Seri :
HiPerFET™, PolarP2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
6.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
97nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
5230pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
540W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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