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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDMJ1023PZ

ON Semiconductor - FDMJ1023PZ

KEY Part #: K6524369

[3855PC Stock]

    Nimewo Pati:
    FDMJ1023PZ
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET 2P-CH 20V 2.9A SC75.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDMJ1023PZ electronic components. FDMJ1023PZ can be shipped within 24 hours after order. If you have any demands for FDMJ1023PZ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDMJ1023PZ Atribi pwodwi yo

    Nimewo Pati : FDMJ1023PZ
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET 2P-CH 20V 2.9A SC75
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : 2 P-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A
    RD sou (Max) @ Id, Vgs : 112 mOhm @ 2.9A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 6.5nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 10V
    Pouvwa - Max : 700mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-WFDFN Exposed Pad
    Pake Aparèy Founisè : SC-75, MicroFET

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