RGP10M-E3/54 Pricing (USD) [1030992PC Stock]
- 1 pcs$0.03588
- 5,500 pcs$0.03318
- 11,000 pcs$0.03025
- 27,500 pcs$0.02830
- 55,000 pcs$0.02602
- Nimewo Pati:
- RGP10M-E3/54
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 1KV 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0 Amp 1000 Volt
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RGP10M-E3/54 electronic components. RGP10M-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP10M-E3/54, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGP10M-E3/54 Atribi pwodwi yo
Nimewo Pati :
RGP10M-E3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1KV 1A DO204AL
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
500ns
Kouran - Fèy Reverse @ Vr :
5µA @ 1000V
Kapasite @ Vr, F :
15pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AL, DO-41, Axial
Pake Aparèy Founisè :
DO-204AL (DO-41)
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
-
1SS250(TE85L,F)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High
-
SE20AFB-M3/6A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 Volts ESD PROTECTION
-
SE20AFD-M3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in
-
SE20AFB-M3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in
-
SE20AFG-M3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in
-
S1M-E3/61T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO214AC. Rectifiers 1.0 Amp 1000 Volt
Pati cho
- IDD12SG60CXTMA2
- S1MFL RVG
- RGP10J-5025M3/73
- JAN1N1190
- R4260F
- R9G22011ASOO
- MURS120HE3/52T
- IDW12G65C5FKSA1
- SB040-E3/54
- NSRM30CM3T5G
- AR3PJHM3/86A
- VS-60CPF02PBF
- VS-150SQ035
- RGP02-14E-M3/73
- RS1GHE3/5AT
- RGP5020HE3/54
- SB160A-E3/73
- GP15KHE3/73
- 1N4937L-T
- MR7510-BP
- JAN1N6629US
- STTH40P03SFP
- BAS29_D87Z
- D4015L
- VS-12TQ040PBF
- SS16T3
- MBRB745
- RS3G-13
- 20ETS12S
- 1PS59SB20,115
- MBRM120ET1H
- ER1D-TP
- 1N4935-TP
- MUR110-AP
- STPS2H100UF
- RU 2V1
- SK56C M6G
- ESH2CHE3_A/I
- BA159GPE-E3/73
- LL4448-GS08