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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMS8018

ON Semiconductor - FDMS8018

KEY Part #: K6416586

FDMS8018 Pricing (USD) [121062PC Stock]

  • 1 pcs$0.30552
  • 3,000 pcs$0.29366
Nimewo Pati:
FDMS8018
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 30A 8PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - RF, Transistors - FETs, MOSFETs - RF and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS8018 electronic components. FDMS8018 can be shipped within 24 hours after order. If you have any demands for FDMS8018, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS8018 Atribi pwodwi yo

Nimewo Pati : FDMS8018
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 30A 8PQFN
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Ta), 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 61nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5235pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 83W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PQFN (5x6)
Pake / Ka : 8-PowerTDFN

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