IXYS - IXTH2N300P3HV

KEY Part #: K6397717

IXTH2N300P3HV Pricing (USD) [2868PC Stock]

  • 1 pcs$16.61394
  • 10 pcs$15.36812
  • 100 pcs$13.12501

Nimewo Pati:
IXTH2N300P3HV
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 3000V 2A TO247HV.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in IXYS IXTH2N300P3HV electronic components. IXTH2N300P3HV can be shipped within 24 hours after order. If you have any demands for IXTH2N300P3HV, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH2N300P3HV Atribi pwodwi yo

Nimewo Pati : IXTH2N300P3HV
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 3000V 2A TO247HV
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 3000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 21 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 73nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1890pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 520W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247HV
Pake / Ka : TO-247-3

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