Toshiba Semiconductor and Storage - 2SK2266(TE24R,Q)

KEY Part #: K6407784

[853PC Stock]


    Nimewo Pati:
    2SK2266(TE24R,Q)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET N-CH 60V 45A TO220SM.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage 2SK2266(TE24R,Q) electronic components. 2SK2266(TE24R,Q) can be shipped within 24 hours after order. If you have any demands for 2SK2266(TE24R,Q), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SK2266(TE24R,Q) Atribi pwodwi yo

    Nimewo Pati : 2SK2266(TE24R,Q)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET N-CH 60V 45A TO220SM
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
    RD sou (Max) @ Id, Vgs : 30 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 65W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-220SM
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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