[856PC Stock]
- Nimewo Pati:
- TPC6006-H(TE85L,F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 40V 3.9A VS6 2-3T1A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Zener - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPC6006-H(TE85L,F) electronic components. TPC6006-H(TE85L,F) can be shipped within 24 hours after order. If you have any demands for TPC6006-H(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC6006-H(TE85L,F) Atribi pwodwi yo
Nimewo Pati :
TPC6006-H(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 40V 3.9A VS6 2-3T1A
Seri :
U-MOSIII-H
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
75 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
4.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
251pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VS-6 (2.9x2.8)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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