Toshiba Semiconductor and Storage - TPC6104(TE85L,F,M)

KEY Part #: K6407774

[857PC Stock]


    Nimewo Pati:
    TPC6104(TE85L,F,M)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET P-CH 20V 4.5A VS6 2-3T1A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage TPC6104(TE85L,F,M) electronic components. TPC6104(TE85L,F,M) can be shipped within 24 hours after order. If you have any demands for TPC6104(TE85L,F,M), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPC6104(TE85L,F,M) Atribi pwodwi yo

    Nimewo Pati : TPC6104(TE85L,F,M)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET P-CH 20V 4.5A VS6 2-3T1A
    Seri : U-MOSIII
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
    RD sou (Max) @ Id, Vgs : 40 mOhm @ 2.8A, 4.5V
    Vgs (th) (Max) @ Id : 1.2V @ 200µA
    Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : 1430pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 700mW (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : VS-6 (2.9x2.8)
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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