Nimewo Pati :
SISH407DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V POWERPAK 1212
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 15.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
93.8nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
2760pF @ 10V
Disipasyon Pouvwa (Max) :
3.6W (Ta), 33W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8SH
Pake / Ka :
PowerPAK® 1212-8SH