IXTH67N10 Pricing (USD) [7493PC Stock]
- 1 pcs$6.32404
- 10 pcs$5.69032
- 100 pcs$4.67856
- 500 pcs$3.91989
- Nimewo Pati:
- IXTH67N10
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 67A TO247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH67N10 electronic components. IXTH67N10 can be shipped within 24 hours after order. If you have any demands for IXTH67N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH67N10 Atribi pwodwi yo
Nimewo Pati :
IXTH67N10
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 67A TO247AD
Seri :
MegaMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
67A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 33.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
260nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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