STGD6M65DF2 Pricing (USD) [165699PC Stock]
- 1 pcs$0.22322
- 2,500 pcs$0.19767
- 5,000 pcs$0.18826
- Nimewo Pati:
- STGD6M65DF2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- TRENCH GATE FIELD-STOP IGBT M S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGD6M65DF2 electronic components. STGD6M65DF2 can be shipped within 24 hours after order. If you have any demands for STGD6M65DF2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGD6M65DF2 Atribi pwodwi yo
Nimewo Pati :
STGD6M65DF2
Manifakti :
STMicroelectronics
Deskripsyon :
TRENCH GATE FIELD-STOP IGBT M S
Seri :
M
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
12A
Kouran - Pèseptè batman (Icm) :
24A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 6A
Pouvwa - Max :
88W
Oblije chanje enèji :
36µJ (on), 200µJ (off)
Kalite Antre :
Standard
Gate chaje :
21.2nC
Td (on / off) @ 25 ° C :
15ns/90ns
Kondisyon egzamen an :
400V, 6A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) :
140ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
DPAK
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