Microsemi Corporation - APT85GR120B2

KEY Part #: K6422503

APT85GR120B2 Pricing (USD) [5398PC Stock]

  • 1 pcs$7.63292
  • 10 pcs$6.93838
  • 25 pcs$6.41783
  • 100 pcs$5.89749
  • 250 pcs$5.37714

Nimewo Pati:
APT85GR120B2
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 170A 962W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT85GR120B2 Atribi pwodwi yo

Nimewo Pati : APT85GR120B2
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 170A 962W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 170A
Kouran - Pèseptè batman (Icm) : 340A
Vce (sou) (Max) @ Vge, Ic : 3.2V @ 15V, 85A
Pouvwa - Max : 962W
Oblije chanje enèji : 6mJ (on), 3.8mJ (off)
Kalite Antre : Standard
Gate chaje : 660nC
Td (on / off) @ 25 ° C : 43ns/300ns
Kondisyon egzamen an : 600V, 85A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : T-MAX™