IXYS - MMIX2F60N50P3

KEY Part #: K6522505

MMIX2F60N50P3 Pricing (USD) [3325PC Stock]

  • 1 pcs$13.02800

Nimewo Pati:
MMIX2F60N50P3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in IXYS MMIX2F60N50P3 electronic components. MMIX2F60N50P3 can be shipped within 24 hours after order. If you have any demands for MMIX2F60N50P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX2F60N50P3 Atribi pwodwi yo

Nimewo Pati : MMIX2F60N50P3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH
Seri : HiPerFET™, Polar3™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
RD sou (Max) @ Id, Vgs : 110 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 96nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 6250pF @ 25V
Pouvwa - Max : 320W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 24-SMD Module, 9 Leads
Pake Aparèy Founisè : 24-SMPD