SCT2H12NZGC11 Pricing (USD) [14962PC Stock]
- 1 pcs$2.19909
- 100 pcs$1.54245
- Nimewo Pati:
- SCT2H12NZGC11
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 1700V 3.7A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor SCT2H12NZGC11 electronic components. SCT2H12NZGC11 can be shipped within 24 hours after order. If you have any demands for SCT2H12NZGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT2H12NZGC11 Atribi pwodwi yo
Nimewo Pati :
SCT2H12NZGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 1700V 3.7A
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs (th) (Max) @ Id :
4V @ 900µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 18V
Vgs (Max) :
+22V, -6V
Antre kapasite (Ciss) (Max) @ Vds :
184pF @ 800V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3PFM
Pake / Ka :
TO-3PFM, SC-93-3
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