IKW30N65EL5XKSA1 Pricing (USD) [16179PC Stock]
- 1 pcs$2.43266
- 10 pcs$2.18499
- 100 pcs$1.79012
- 500 pcs$1.52391
- 1,000 pcs$1.28523
- Nimewo Pati:
- IKW30N65EL5XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 650V 30A FAST DIODE TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Objektif espesyal and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IKW30N65EL5XKSA1 electronic components. IKW30N65EL5XKSA1 can be shipped within 24 hours after order. If you have any demands for IKW30N65EL5XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IKW30N65EL5XKSA1 Atribi pwodwi yo
Nimewo Pati :
IKW30N65EL5XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 650V 30A FAST DIODE TO247-3
Seri :
TrenchStop™ 5
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
85A
Kouran - Pèseptè batman (Icm) :
120A
Vce (sou) (Max) @ Vge, Ic :
1.35V @ 15V, 30A
Pouvwa - Max :
227W
Oblije chanje enèji :
470µJ (on), 1.35mJ (off)
Kalite Antre :
Standard
Gate chaje :
168nC
Td (on / off) @ 25 ° C :
33ns/308ns
Kondisyon egzamen an :
400V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
100ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
PG-TO247-3
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