Deskripsyon :
MOSFET 3N/3P-CH 60V 10A/6A 12SIP
FET Kalite :
3 N and 3 P-Channel (3-Phase Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A, 6A
RD sou (Max) @ Id, Vgs :
140 mOhm @ 5A, 4V
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
460pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
12-SIP w/fin