Nimewo Pati :
ZXMN10A08E6TC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 100V 1.5A SOT23-6
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
250 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
405pF @ 50V
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-26