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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMS4706NR2

ON Semiconductor - NTMS4706NR2

KEY Part #: K6409036

[421PC Stock]

    Nimewo Pati:
    NTMS4706NR2
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 30V 6.4A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTMS4706NR2 electronic components. NTMS4706NR2 can be shipped within 24 hours after order. If you have any demands for NTMS4706NR2, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTMS4706NR2 Atribi pwodwi yo

    Nimewo Pati : NTMS4706NR2
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 30V 6.4A 8-SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.4A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 12 mOhm @ 10.3A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 950pF @ 24V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 830mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-SOIC
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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