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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCI25N60N

ON Semiconductor - FCI25N60N

KEY Part #: K6404629

[1945PC Stock]

    Nimewo Pati:
    FCI25N60N
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 600V 25A I2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - JFETs and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FCI25N60N electronic components. FCI25N60N can be shipped within 24 hours after order. If you have any demands for FCI25N60N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FCI25N60N Atribi pwodwi yo

    Nimewo Pati : FCI25N60N
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 600V 25A I2PAK
    Seri : SupreMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 125 mOhm @ 12.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 3352pF @ 100V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 216W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK (TO-262)
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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