APT25GN120B2DQ2G Pricing (USD) [9465PC Stock]
- 1 pcs$4.37589
- 56 pcs$4.35412
- Nimewo Pati:
- APT25GN120B2DQ2G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 1200V 67A 272W TMAX.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT25GN120B2DQ2G electronic components. APT25GN120B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT25GN120B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT25GN120B2DQ2G Atribi pwodwi yo
Nimewo Pati :
APT25GN120B2DQ2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 67A 272W TMAX
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT, Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
67A
Kouran - Pèseptè batman (Icm) :
75A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 25A
Pouvwa - Max :
272W
Oblije chanje enèji :
2.15µJ (off)
Kalite Antre :
Standard
Gate chaje :
155nC
Td (on / off) @ 25 ° C :
22ns/280ns
Kondisyon egzamen an :
800V, 25A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
-
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-
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