IRF100P219XKMA1 Pricing (USD) [11574PC Stock]
- 1 pcs$3.56086
- Nimewo Pati:
- IRF100P219XKMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- TRENCHMOSFETS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF100P219XKMA1 electronic components. IRF100P219XKMA1 can be shipped within 24 hours after order. If you have any demands for IRF100P219XKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF100P219XKMA1 Atribi pwodwi yo
Nimewo Pati :
IRF100P219XKMA1
Manifakti :
Infineon Technologies
Deskripsyon :
TRENCHMOSFETS
Seri :
StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 278µA
Chaje Gate (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
12020pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
341W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC
Pake / Ka :
TO-247-3
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