Infineon Technologies - IPT60R050G7XTMA1

KEY Part #: K6416571

IPT60R050G7XTMA1 Pricing (USD) [16233PC Stock]

  • 1 pcs$2.60751
  • 2,000 pcs$2.59454

Nimewo Pati:
IPT60R050G7XTMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V 44A HSOF-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPT60R050G7XTMA1 electronic components. IPT60R050G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPT60R050G7XTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPT60R050G7XTMA1 Atribi pwodwi yo

Nimewo Pati : IPT60R050G7XTMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 44A HSOF-8
Seri : CoolMOS™ G7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 44A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 50 mOhm @ 15.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 800µA
Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2670pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 245W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-HSOF-8-2
Pake / Ka : 8-PowerSFN

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