Nimewo Pati :
IPT60R050G7XTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 44A HSOF-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
44A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
50 mOhm @ 15.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 800µA
Chaje Gate (Qg) (Max) @ Vgs :
68nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2670pF @ 400V
Disipasyon Pouvwa (Max) :
245W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-2