STMicroelectronics - STP26NM60ND

KEY Part #: K6414253

[12818PC Stock]


    Nimewo Pati:
    STP26NM60ND
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 600V 21A TO220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STP26NM60ND electronic components. STP26NM60ND can be shipped within 24 hours after order. If you have any demands for STP26NM60ND, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STP26NM60ND Atribi pwodwi yo

    Nimewo Pati : STP26NM60ND
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 600V 21A TO220
    Seri : FDmesh™ II
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 175 mOhm @ 10.5A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 54.6nC @ 10V
    Vgs (Max) : ±25V
    Antre kapasite (Ciss) (Max) @ Vds : 1817pF @ 100V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 190W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220
    Pake / Ka : TO-220-3