ON Semiconductor - FQPF4N25

KEY Part #: K6410957

[13957PC Stock]


    Nimewo Pati:
    FQPF4N25
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 250V 2.8A TO-220F.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQPF4N25 electronic components. FQPF4N25 can be shipped within 24 hours after order. If you have any demands for FQPF4N25, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQPF4N25 Atribi pwodwi yo

    Nimewo Pati : FQPF4N25
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 250V 2.8A TO-220F
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.8A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.75 Ohm @ 1.4A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 200pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 32W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220F
    Pake / Ka : TO-220-3 Full Pack