STD120N4LF6 Pricing (USD) [66291PC Stock]
- 1 pcs$0.59278
- 2,500 pcs$0.58983
- Nimewo Pati:
- STD120N4LF6
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 40V 80A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - JFETs, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STD120N4LF6 electronic components. STD120N4LF6 can be shipped within 24 hours after order. If you have any demands for STD120N4LF6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD120N4LF6 Atribi pwodwi yo
Nimewo Pati :
STD120N4LF6
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 40V 80A DPAK
Seri :
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
4 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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