Vishay Siliconix - SIRA06DP-T1-GE3

KEY Part #: K6396193

SIRA06DP-T1-GE3 Pricing (USD) [167720PC Stock]

  • 1 pcs$0.22053
  • 3,000 pcs$0.20708

Nimewo Pati:
SIRA06DP-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 30V 40A PPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA06DP-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIRA06DP-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 40A PPAK SO-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : +20V, -16V
Antre kapasite (Ciss) (Max) @ Vds : 3595pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Ta), 62.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8