IRFPS3810PBF Pricing (USD) [9222PC Stock]
- 1 pcs$4.50836
- 10 pcs$4.05752
- 100 pcs$3.33619
- 500 pcs$2.79518
- Nimewo Pati:
- IRFPS3810PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 170A SUPER247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Diodes - RF and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFPS3810PBF electronic components. IRFPS3810PBF can be shipped within 24 hours after order. If you have any demands for IRFPS3810PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFPS3810PBF Atribi pwodwi yo
Nimewo Pati :
IRFPS3810PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 170A SUPER247
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
170A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
390nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6790pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
580W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
SUPER-247™ (TO-274AA)
Pake / Ka :
TO-274AA
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