[665PC Stock]
- Nimewo Pati:
- SIDC14D120H6X1SA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE GEN PURP 1.2KV 25A WAFER.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies SIDC14D120H6X1SA1 electronic components. SIDC14D120H6X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC14D120H6X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC14D120H6X1SA1 Atribi pwodwi yo
Nimewo Pati :
SIDC14D120H6X1SA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 1.2KV 25A WAFER
Seri :
-
Estati Pati :
Discontinued at Digi-Key
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
25A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.6V @ 25A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
27µA @ 1200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Sawn on foil
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
-
C4D08120E
Cree/Wolfspeed
DIODE SCHOTTKY 1.2KV 8A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 7.5A
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