BAW27-TR Pricing (USD) [3340050PC Stock]
- 1 pcs$0.01107
- 50,000 pcs$0.00930
- Nimewo Pati:
- BAW27-TR
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - JFETs, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BAW27-TR electronic components. BAW27-TR can be shipped within 24 hours after order. If you have any demands for BAW27-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAW27-TR Atribi pwodwi yo
Nimewo Pati :
BAW27-TR
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 60V 600MA DO35
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
60V
Kouran - Mwayèn Rèktifye (Io) :
600mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 400mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
6ns
Kouran - Fèy Reverse @ Vr :
100nA @ 60V
Kapasite @ Vr, F :
4pF @ 0V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
175°C (Max)
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