APTM50H10FT3G Pricing (USD) [1414PC Stock]
- 1 pcs$30.78489
- 100 pcs$30.63173
- Nimewo Pati:
- APTM50H10FT3G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 4N-CH 500V 37A SP3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTM50H10FT3G electronic components. APTM50H10FT3G can be shipped within 24 hours after order. If you have any demands for APTM50H10FT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM50H10FT3G Atribi pwodwi yo
Nimewo Pati :
APTM50H10FT3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 500V 37A SP3
Seri :
-
Estati Pati :
Active
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
37A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 18.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
96nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4367pF @ 25V
Pouvwa - Max :
312W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP3
Pake Aparèy Founisè :
SP3
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