Nimewo Pati :
APTM50H10FT3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 500V 37A SP3
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
37A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 18.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
96nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4367pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3