STGP19NC60SD Pricing (USD) [78750PC Stock]
- 1 pcs$0.49900
- 1,000 pcs$0.49651
- Nimewo Pati:
- STGP19NC60SD
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 600V 40A 130W TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGP19NC60SD electronic components. STGP19NC60SD can be shipped within 24 hours after order. If you have any demands for STGP19NC60SD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGP19NC60SD Atribi pwodwi yo
Nimewo Pati :
STGP19NC60SD
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 600V 40A 130W TO220
Seri :
PowerMESH™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
40A
Kouran - Pèseptè batman (Icm) :
80A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 12A
Pouvwa - Max :
130W
Oblije chanje enèji :
135µJ (on), 815µJ (off)
Kalite Antre :
Standard
Gate chaje :
54.5nC
Td (on / off) @ 25 ° C :
17.5ns/175ns
Kondisyon egzamen an :
480V, 12A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
31ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220
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