[3508PC Stock]
- Nimewo Pati:
- 2N7002T,215
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 300MA SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. 2N7002T,215 electronic components. 2N7002T,215 can be shipped within 24 hours after order. If you have any demands for 2N7002T,215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7002T,215 Atribi pwodwi yo
Nimewo Pati :
2N7002T,215
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 60V 300MA SOT-23
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
40pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB (SOT23)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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