Infineon Technologies - IPL60R365P7AUMA1

KEY Part #: K6419032

IPL60R365P7AUMA1 Pricing (USD) [88338PC Stock]

  • 1 pcs$0.44983
  • 3,000 pcs$0.44759

Nimewo Pati:
IPL60R365P7AUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V 10A VSON-4.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - SCR and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL60R365P7AUMA1 Atribi pwodwi yo

Nimewo Pati : IPL60R365P7AUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 10A VSON-4
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 365 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 140µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 555pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 46W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-VSON-4
Pake / Ka : 4-PowerTSFN