IXYS - IXTR30N25

KEY Part #: K6412167

IXTR30N25 Pricing (USD) [8730PC Stock]

  • 1 pcs$5.45583
  • 30 pcs$5.42869

Nimewo Pati:
IXTR30N25
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 250V 25A ISOPLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - RF, Transistors - JFETs and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in IXYS IXTR30N25 electronic components. IXTR30N25 can be shipped within 24 hours after order. If you have any demands for IXTR30N25, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTR30N25 Atribi pwodwi yo

Nimewo Pati : IXTR30N25
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 250V 25A ISOPLUS247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 75 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 136nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3950pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ISOPLUS247™
Pake / Ka : ISOPLUS247™