[13563PC Stock]
- Nimewo Pati:
- 2N7000,126
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 300MA TO-92.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - JFETs, Tiristors - DIACs, SIDACs and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. 2N7000,126 electronic components. 2N7000,126 can be shipped within 24 hours after order. If you have any demands for 2N7000,126, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7000,126 Atribi pwodwi yo
Nimewo Pati :
2N7000,126
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 60V 300MA TO-92
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
40pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-92-3
Pake / Ka :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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