Nexperia USA Inc. - PSMN7R6-100BSEJ

KEY Part #: K6418520

PSMN7R6-100BSEJ Pricing (USD) [67261PC Stock]

  • 1 pcs$0.58133
  • 800 pcs$0.51593

Nimewo Pati:
PSMN7R6-100BSEJ
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR, Diodes - Zener - Arrays and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN7R6-100BSEJ electronic components. PSMN7R6-100BSEJ can be shipped within 24 hours after order. If you have any demands for PSMN7R6-100BSEJ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN7R6-100BSEJ Atribi pwodwi yo

Nimewo Pati : PSMN7R6-100BSEJ
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 7.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 128nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7110pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 296W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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