Vishay Semiconductor Diodes Division - GI756-E3/54

KEY Part #: K6452992

GI756-E3/54 Pricing (USD) [235208PC Stock]

  • 1 pcs$0.15725
  • 800 pcs$0.14809
  • 1,600 pcs$0.11847
  • 2,400 pcs$0.10736
  • 5,600 pcs$0.09996
  • 20,000 pcs$0.09872

Nimewo Pati:
GI756-E3/54
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 6A P600. Rectifiers 6.0 Amp 600 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GI756-E3/54 electronic components. GI756-E3/54 can be shipped within 24 hours after order. If you have any demands for GI756-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GI756-E3/54 Atribi pwodwi yo

Nimewo Pati : GI756-E3/54
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 6A P600
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 6A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2.5µs
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 150pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : P600, Axial
Pake Aparèy Founisè : P600
Operating Tanperati - Junction : -50°C ~ 150°C

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