TK8A55DA(STA4,Q,M) Pricing (USD) [65399PC Stock]
- 1 pcs$0.66096
- 50 pcs$0.65767
- Nimewo Pati:
- TK8A55DA(STA4,Q,M)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 550V 7.5A TO-220SIS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - JFETs, Tiristors - DIACs, SIDACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK8A55DA(STA4,Q,M) electronic components. TK8A55DA(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK8A55DA(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK8A55DA(STA4,Q,M) Atribi pwodwi yo
Nimewo Pati :
TK8A55DA(STA4,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 550V 7.5A TO-220SIS
Seri :
π-MOSVII
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.07 Ohm @ 3.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
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