RW1E025RPT2CR Pricing (USD) [1208286PC Stock]
- 1 pcs$0.03384
- 8,000 pcs$0.03367
- Nimewo Pati:
- RW1E025RPT2CR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 30V 2.5A WEMT6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RW1E025RPT2CR electronic components. RW1E025RPT2CR can be shipped within 24 hours after order. If you have any demands for RW1E025RPT2CR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RW1E025RPT2CR Atribi pwodwi yo
Nimewo Pati :
RW1E025RPT2CR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 30V 2.5A WEMT6
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
75 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
480pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WEMT
Pake / Ka :
SOT-563, SOT-666
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