IXYS - IXTN5N250

KEY Part #: K6400233

IXTN5N250 Pricing (USD) [1884PC Stock]

  • 1 pcs$25.40404
  • 10 pcs$25.27765

Nimewo Pati:
IXTN5N250
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 2500V 5A SOT227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in IXYS IXTN5N250 electronic components. IXTN5N250 can be shipped within 24 hours after order. If you have any demands for IXTN5N250, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTN5N250 Atribi pwodwi yo

Nimewo Pati : IXTN5N250
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 2500V 5A SOT227B
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 2500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 8.8 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 200nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 8560pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC