[13451PC Stock]
- Nimewo Pati:
- NTHS4111PT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 30V 3.3A CHIPFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTHS4111PT1G electronic components. NTHS4111PT1G can be shipped within 24 hours after order. If you have any demands for NTHS4111PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTHS4111PT1G Atribi pwodwi yo
Nimewo Pati :
NTHS4111PT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 30V 3.3A CHIPFET
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1500pF @ 24V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ChipFET™
Pake / Ka :
8-SMD, Flat Lead
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