Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 1.2KV TO247-3
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
65A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
69 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
122nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
1900pF @ 400V
Disipasyon Pouvwa (Max) :
318W (Tc)
Operating Tanperati :
-55°C ~ 200°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
HiP247™