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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  4. Transistors - FETs, MOSFETs - Single
  5. APT30M70BVFRG

Microsemi Corporation - APT30M70BVFRG

KEY Part #: K6396496

APT30M70BVFRG Pricing (USD) [6742PC Stock]

  • 1 pcs$6.75706
  • 35 pcs$6.72345
Nimewo Pati:
APT30M70BVFRG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 300V 48A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Tiristors - TRIACs and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT30M70BVFRG electronic components. APT30M70BVFRG can be shipped within 24 hours after order. If you have any demands for APT30M70BVFRG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT30M70BVFRG Atribi pwodwi yo

Nimewo Pati : APT30M70BVFRG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 300V 48A TO-247
Seri : POWER MOS V®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 48A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 70 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 225nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 5870pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 370W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3

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